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Irradiation test of Staystik thermoplastic adhesive film type 571

M.Moll, C.Joram, I.McGill

Characterization of the film as given by the producer Alpha-Fry Technologies
Die Shear Adhesion @ 25C: > 2000 psi
> 13790 kPa   (Pa = kg/(ms2) = N/m2)
> 13.8 N/mm2
> 414 N/die   with a die of 5x6mm2

 

Preparation of samples (6 June 2002):

Support:

Ceramic sample holders (5x5cm² ) with thin square shaped gold layer in middle (2x2cm² ).

Samples to be glued:

For shear test: Microelectronic chips (OPAL-experiment) of 6x5mm²
For conductivity test:- Pieces of Aluminum foil of 6x5mm²

Gluing:

The ceramic sample holder was placed on a hot plate of a die bonder (170°C) and 6x5mm² pieces of the Staystik-film were placed on the hot ceramic sample holder.
Afterwards the chips and the pieces of aluminum foil were placed with a die bonder on the hot staystik film.

Figure of the sample:  5 such samples were produced

Irradiation of samples (6 - 12 June 2002)

4 samples were irradiated with 24 GeV/c protons at the CERN irradiation facility IRRAD1.
Great care was taken to measure the irradiation fluence for each individual chip and aluminium.

Sample Chip, left,up Chip,right,up Chip,right,down Al,left,down
Sample 01 non non non non
Sample 02 (531) (532) (533) (534)
Sample 03 2.5e14(535) (536) 3.3e14(537) (538)
Sample 05 (539) (540) 3.6e14(541) 3.9e14(542)
Sample 04 1.2e15(543) 1.2e15(544) 1.7e15(545) 1.4e15(546)


Table: 24GeV/c proton fluence [p/cm2] and in brackets the label of the according dosimeter.
Details about the dosimetry including measurement errors for the individual dosimeters can be found here.

Conductivity test

The resistivity was measured with a Keithley 2410 between the Gold -layer and the Aluminium foil.


Sample Fluence Resistivity [ohm]
Sample 01 non 1.6 ? 0.2
Sample 02   1.2 ? 0.2
Sample 03 3e14 2.4 ? 0.2
Sample 05 3.9e14(542) 2.3 ? 0.2
Sample 04 1.4e15(546) 1.4 ? 0.2


Shear test


Conclusion:

Also no quantitative values can be given for a shear test, the performed experiment demonstrated that the adhesive film is still holding electronic chips sufficiently strong after an irradiation with 24 GeV/c protons of up to 1.7e15 p/cm2. The chips were strongly attached to the film and could not easily be removed by hand. Within the resolution of the conductivity measurement no change of the resistivity of the film was observed (<1W for a 6x5mm2 piece).

 




 

    
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